New models for thermal stress simulation in 3D nano CMOS transistors

In this paper, we are developing new analytical models based on exponential function to calculate the thermal expansion coefficient of Silicon Germanium thin films for low and high temperatures. These new models are more accurate than polynomial based models. And, they take into account the effects of temperature and Germanium mole fraction. This thermal expansion coefficient is used to calculate the thermal induced intrinsic stress in Silicon Germanium thin films after deposition. And, this intrinsic stress is used to calculate and simulate numerically the resulting extrinsic stress in the channel of an Intel nano PMOSFET transistor. Validation of these models using available experimental data and channel stress will be discussed and analyzed according to literature.