DocumentCode :
724792
Title :
Low Drift Zener-based voltage reference
Author :
Marinca, Stefan ; Bucur, Viorel
Author_Institution :
Analog Devices Int., Limerick, Ireland
fYear :
2015
fDate :
24-25 June 2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents an alternative architecture for a Monolithic IC Buried Zener-type voltage reference implemented on a 0.6μm BICMOS process. Low supply voltage, good power supply rejection, reduced process dependency, low Long Term Drift (LTD) with capability of an easy and effective Temperature Coefficient (TC) trim are all features of the presented architecture. Good simulated performance and very promising silicon results with standard deviation of 9.31mV, a mean value of 4.786V and temperature coefficient after trimming of less than 1.5ppm/°C were obtained for all tested parts.
Keywords :
BiCMOS integrated circuits; Zener diodes; monolithic integrated circuits; reference circuits; BICMOS process; LTD; long term drift; low drift Zener; monolithic IC buried Zener-type voltage reference; size 0.6 mum; temperature coefficient trim; voltage 4.786 V; voltage 9.31 mV; Analog integrated circuits; Bipolar transistors; Computer architecture; Current density; Silicon; Temperature; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signals and Systems Conference (ISSC), 2015 26th Irish
Conference_Location :
Carlow
Type :
conf
DOI :
10.1109/ISSC.2015.7163778
Filename :
7163778
Link To Document :
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