A Traveling-Wave CMOS SPDT Using Slow-Wave Transmission Lines for Millimeter-Wave Application

Author

Xiao-Lan Tang ; Pistono, Emmanuel ; Ferrari, P. ; Fournier, J.-M.

Author_Institution

Inst. of Microelectron. Electromagn. & Photonic, Grenoble, France

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1094

Lastpage

1096

Abstract

In this letter, a traveling-wave single-pole double-throw (SPDT) switch using slow-wave coplanar waveguides is implemented in a 65-nm triple-well CMOS process. For performance improvement, double-well body-floating technique is used. The p-well layer and deep n-well layer of nMOSFET being, respectively, biased to -1.4 and 2.0 V, the measured SPDT exhibits an insertion loss of 2.8 dB and an isolation of 20 dB at 60 GHz. A measured input 1-dB compression point (ICP1dB) of 17 dBm is obtained at 35 GHz (16.3 dBm at 60 GHz by simulation). The total chip size is only 0.42 mm² (780 μm× 540 μm) including all testing pads.

Keywords

CMOS integrated circuits; coplanar transmission lines; coplanar waveguides; field effect MIMIC; field effect transistor switches; microwave switches; millimeter-wave application; nMOSFET; single-pole double-throw switch; slow-wave coplanar waveguides; slow-wave transmission lines; traveling-wave CMOS SPDT switch; CMOS integrated circuits; Insertion loss; Loss measurement; Millimeter wave technology; Switches; Switching circuits; Transmission line measurements; 65-nm RF-CMOS process; millimeter-wave; single-pole double-throw (SPDT); slow-wave coplanar waveguide; traveling-wave; triple-well MOS;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2274452

Filename

6575093