• DocumentCode
    725089
  • Title

    In-line inspection of DRC generated Hotspots

  • Author

    Srivastava, Amit ; Nguyen, Hoang ; Hermann, Thomas ; Kirsch, Remo ; Kini, Rajeev

  • Author_Institution
    DFM, GlobalFoundries Inc., Malta, NY, USA
  • fYear
    2015
  • fDate
    3-6 May 2015
  • Firstpage
    336
  • Lastpage
    339
  • Abstract
    Design Hotspots are features on a silicon chip, which are susceptible to pattern failures. While multiple methods like DRC, ORC and CFM inspection are used to identify these Hotspots, in-line monitoring of these design Hotspots has remained a challenge. Existing methods of Hotspot inspection, which include API and EBI are not suited for large scale inspection due to system limitations and throughput limitations respectively. NanoPoint inspection, which is a recent advance in BBP inspection, has enabled in-line inspection of Design Hotspots at very high throughput. In this paper, a methodology for in-line inspection of Design Hotspots using NanoPoint BBP inspection is presented.
  • Keywords
    design for manufacture; inspection; semiconductor technology; DRC generated hotspots; in-line inspection; nanopoint inspection; pattern failures; Analytical models; Inspection; Metals; Semiconductor device modeling; Silicon; Systematics; Throughput; DRC; Design Hotspot; NanoPoint; in-line defect inspection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
  • Conference_Location
    Saratoga Springs, NY
  • Type

    conf

  • DOI
    10.1109/ASMC.2015.7164415
  • Filename
    7164415