Title :
Correlation of non-visual defects at post copper CMP to yield critical physical defects at next metallization layer
Author :
Specht, M. ; Franke, H. ; Luxenhofer, O. ; Mai, K. ; Usry, W. ; Newcomb, R.
Author_Institution :
Infineon Technol. Dresden GmbH, Dresden, Germany
Abstract :
The NVD inspection system detected radial “streak” like NVDs at the post Cu CMP clean process that were not detected by the optical inspection system. Layer to layer overlay of the NVD defect maps from the current Cu CMP layer with the optical defect maps from post nitride deposition and the next copper interconnect level revealed that the NVDs were truly the root cause of the yield critical defect issue.
Keywords :
chemical mechanical polishing; copper; inspection; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; Cu; NVD inspection system; next copper interconnect level; next metallization layer; nonvisual defects; optical defect maps; optical inspection system; post copper CMP; post nitride deposition; radial streak; yield critical physical defects; Copper; Correlation; Inspection; Optical imaging; Optical interconnections; Production; Surface treatment;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2015.7164441