Using the low frequency component of the background signal for SiGe and Ge growth monitoring

The objective of this paper is to elucidate novel applications where the low frequency component of a background signal (haze) level of a wafer inspection tool can be used to qualitatively analyze different epitaxial processes. During initial epitaxial development cycles, a fast method of qualifying the growth runs is required. While SEM inspections can sub-sample the wafer, a semi-quantitative way of qualifying growth can be immensely helpful to quicken up the process. In this paper we monitor the epitaxial growth of Ge (heteroepîtaxial) and SiGe strain relaxed buffer layers (SRB approach) with haze.