Rapid non-destructive detection of sub-surface Cu in silicon-on-insulator wafers by optical second harmonic generation

Author

Koldyaev, V. ; Kryger, M.C. ; Changala, J.P. ; Alles, M.L. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Tolk, N.

Author_Institution

R&D, Femtometrix, Inc., Santa Ana, CA, USA

fYear

2015

fDate

3-6 May 2015

Firstpage

212

Lastpage

215

Abstract

Time dependent second harmonic optical signals were measured across silicon-on-insulator (SOI) wafer coupons contaminated by Cu-63 ion implanted into the buried oxide (BOX) and near the SOI/BOX and BOX/Bulk interfaces. Average signals after 1 second of exposure for all spatial points were compared between wafers and used to differentiate contamination levels post ion-implantation.

Keywords

copper; ion implantation; optical harmonic generation; silicon-on-insulator; surface contamination; BOX; Cu-63 ion implantation; SOI wafers; Si:Cu; buried oxide; optical second harmonic generation; rapid nondestructive detection; silicon-on-insulator wafers; sub-surface copper; time dependent second harmonic optical signals; wafer coupons contamination; Copper; Electric fields; Frequency conversion; Nonlinear optics; Silicon-on-insulator; Standards; Ultrafast optics; AM: Advanced Metrology; DI: Defect Inspection and Reduction;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI

Conference_Location

Saratoga Springs, NY

Type

conf

DOI

10.1109/ASMC.2015.7164473

Filename

7164473