Title :
Challenges in integrating embedded non volatile memory with floating poly and ONO in base line process
Author :
Agam, Moshe ; Menon, Santosh ; Cosmin, Peter ; Yao, Thierry ; McGrath, Peter ; Ruiz, Bladimiro ; Baylis, Brian ; Ameele, Eric ; Rolofson, Kirk ; Young, Roger
Abstract :
This paper discuss the challenges of the integration of non volatile memory array in base line CMOS technology. Process modules of Oxide-Nitride-Oxide (ONO) and floating poly are reviewed with specific examples. This integration work resulted in a successful production line with a path for additional integration of high power LDMOS devices with deep trench isolation (DTI).
Keywords :
CMOS memory circuits; isolation technology; modules; random-access storage; CMOS technology; DTI; ONO; base line process; complementary metal oxide semiconductor; deep trench isolation; embedded non volatile memory integration; floating poly; high power LDMOS device; laterally diffused metal oxide semiconductor; oxide-nitride-oxide; process module; CMOS integrated circuits; EPROM; BARC; EEPROM; FLASH; Floating poly contact; ONO; ONO Fence; ONO etch; Poly stringers; Resist lifting; SCI clean;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2015.7164485
