DocumentCode :
725143
Title :
Effect of defectivity reduction in Spacer and Junction modules on RMG defectivity
Author :
Sehgal, Akshey ; Kuchibhatla, Sridhar ; Krishnan, Bharat ; Bhattacharyya, Dhiman ; Jing Wan ; Hsiao-Chi Peng ; Shi You
Author_Institution :
GLOBALFOUNDRIES Inc., Malta, NY, USA
fYear :
2015
fDate :
3-6 May 2015
Firstpage :
150
Lastpage :
151
Abstract :
Defect elimination from the Spacers and Junctions modules has been shown to increase yield in 20 nm HVM (high volume manufacturing). However, other defects such as surface particles and lifted pattern were also found in these modules. These defects formed voids downstream and later were filled with metals in the RMG (replacement metal gate) process. Therefore, these defects also need to be eliminated in order to meet entitlement yield. These defects were traced through the line from their origination in the Spacer and Junction modules into RMG and MOL (middle of line) modules. Surface particles and lifted pattern were eliminated by developing a new photoresist stripping (PRS) process. The effectiveness of the new PRS process was verified by defect elimination in the Spacer and Junctions and in the downstream RMG module. Defectivity reduction and electrical data will be presented to show the effectiveness of this new PRS process.
Keywords :
metallisation; nanoelectronics; photoresists; HVM; MOL modules; PRS process; RMG defectivity; RMG module; RMG process; defect elimination; defectivity reduction; electrical data; high volume manufacturing; junction modules; middle of line; photoresist stripping; replacement metal gate; spacer modules; surface particles; Junctions; Logic gates; Manufacturing; Metals; Performance evaluation; Resists; Surface treatment; 20 nm; Defect Elimination; High Volume Manufacturing; Photoresist Stripping; Spacer and Junction Modules;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Type :
conf
DOI :
10.1109/ASMC.2015.7164487
Filename :
7164487
Link To Document :
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