Validation of High Efficiency ICP Source performance for advanced resist ashing

Author

Nagorny, Vladimir ; Vaniapura, Vijay ; Surla, Vijay

Author_Institution

Mattson Technol., Fremont, CA, USA

fYear

2015

fDate

3-6 May 2015

Firstpage

301

Lastpage

304

Abstract

High Efficiency plasma Source (HES) was proposed before for use in a dry strip process [1]. Some extremely high ash rate significantly exceeding 10um/min from reference blanket photoresist wafer has been achieved. HES performance with different process chemistries, reliability of the source and repeatability of results was validated under many conditions, including extreme ones, such as cycling very long processes at high power (5kW). Repeatable process results with reliable hardware performance were obtained from the tool equipped with HES plasma source in a regular 300mm configuration. In this paper we report some of these results as well as some data from 450mm C&F process chamber.

Keywords

photoresists; reliability; semiconductor technology; sputter etching; C&F process chamber; HES; ash rate; dry strip process; high efficiency ICP source performance; high efficiency plasma source; inductively coupled plasma; reference blanket photoresist wafer; resist ashing; Ash; Hardware; Heating; Iterative closest point algorithm; Plasma sources; Strips; Ashing; ICP; Inductively coupled plasma; Photoresist Strip; Plasma Source;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI

Conference_Location

Saratoga Springs, NY

Type

conf

DOI

10.1109/ASMC.2015.7164499

Filename

7164499