• DocumentCode
    725175
  • Title

    A fully integrated CMOS IF module for C-band RF transceiver

  • Author

    Kai Zhang ; Zhiqun Li ; Zengqi Wang ; Yang Guo ; Tailun Sun

  • Author_Institution
    Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
  • fYear
    2015
  • fDate
    March 30 2015-April 1 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a fully integrated IF module which can receive or transmit signal with only one port. The switching time between reception and transmission is less than 3μs. In the state of reception, the IF module can convert differential signal to single-ended signal. Simulation results show 3.2dB power gain and 11.65dBm OP1dB while drawing 45mA from a 3.3V supply. In the state of transmission, the IF module can convert single-ended signal to differential signal. Simulation results show 0~15dB programmable voltage gain and -3.5dBm IP1dB while drawing 16mA from a 3.3V supply. At working frequency of 1.3GHz~1.4GHz, VSWRs can attain high performance in two states, both are less than 1.5* 1. The chip is designed in 0.18μm CMOS technology, the die area is 1.5*1.5 mm2. All the components of the linearization scheme are designed on-chip enabling maintenance of a single chip transceiver solution.
  • Keywords
    CMOS integrated circuits; signal processing; transceivers; C-band RF transceiver; CMOS technology; differential signal; fully integrated CMOS IF module; programmable voltage gain; receive signal; reception; single chip transceiver; single-ended signal; switching time; transmit signal; CMOS integrated circuits; Electronics packaging; Impedance matching; Ports (Computers); Power amplifiers; Radio frequency; Transceivers; CMOS; balun; high linearity; power amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Symposium (IWS), 2015 IEEE International
  • Conference_Location
    Shenzhen
  • Type

    conf

  • DOI
    10.1109/IEEE-IWS.2015.7164545
  • Filename
    7164545