W-band low power sub-harmonic mixer IC in 130-nm SiGe BiCMOS

Author

Xin Yang ; Zheng Sun ; Shibata, Takayuki ; Yoshimasu, Toshihiko

Author_Institution

Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan

fYear

2015

fDate

March 30 2015-April 1 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents a sub-harmonic mixer IC design for W-band automotive radar applications in 130-nm SiGe BiCMOS technology. The mixer makes use of a Common Emitter Common Collector Transistor Pair (CECCTP) structure mixer core with a Marchand balun for the W-band on-wafer measurement. The balun achieves a measured amplitude imbalanced of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz. The sub-harmonic mixer IC exhibits a conversion gain of 3.8 dB at 80 GHz with an LO power of 0 dBm at 39.5 GHz. And the mixer core only consumes 0.42 mA with a supply voltage of 2.5 V.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; harmonic analysis; millimetre wave mixers; transistor circuits; BiCMOS technology; CECCTP structure mixer core; LO power; Marchand balun; SiGe; W-band low power subharmonic mixer IC; W-band on-wafer measurement; amplitude imbalance; common emitter common collector transistor pair; conversion gain; current 0.42 mA; frequency 20 GHz to 66 GHz; frequency 39.5 GHz; frequency 80 GHz; gain 3.8 dB; phase imbalance; size 130 nm; voltage 2.5 V; Frequency measurement; Gain; Impedance matching; Integrated circuits; Mixers; Radio frequency; Silicon germanium; 130-nm SiGe BiCMOS; CECCTP; Marchand Balun; Sub-harmonic mixer; W-band; low power;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2015 IEEE International

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/IEEE-IWS.2015.7164557

Filename

7164557