Title :
Integrated Doherty RF CMOS Power Amplifier design for average efficiency enhancement
Author :
Deltimple, Nathalie ; Carneiro, Marcos L. ; Kerherve, Eric ; Carvalho, Paulo H. P. ; Belot, Didier
Author_Institution :
IMS Lab., Univ. of Bordeaux, Bordeaux, France
fDate :
March 30 2015-April 1 2015
Abstract :
This paper deals with the implementation of a RF Doherty Power Amplifier (DPA) with the objective of improving the average efficiency. This technique is an interesting way to provide efficient PA for high PAPR signal of more recent standards of communications. The Doherty principle is applied to a 2.5GHz fully integrated PA on a CMOS 65nm technology. The DPA exhibits 23.4dBm output power, 15dB of power gain and 24.7% of PAE on a 7 dB power range. The die size is 2.89mm2. To fulfill high data rates, wide-band behavior is a big challenge. Hence the wideband behavior of integrated DPA is also investigated.
Keywords :
CMOS integrated circuits; power amplifiers; DPA; Doherty principle; PAPR signal; RF Doherty power amplifier; average efficiency enhancement; frequency 2.5 GHz; gain 15 dB; gain 23.4 dB; gain 7 dB; integrated Doherty RF CMOS power amplifier design; power gain; size 2.89 mm; size 65 nm; wide band behavior; CMOS integrated circuits; CMOS technology; Peak to average power ratio; Power amplifiers; Power generation; Radio frequency; Transmission line measurements; Doherty power amplifier; RF CMOS integrated circuit; efficiency enhancement;
Conference_Titel :
Wireless Symposium (IWS), 2015 IEEE International
Conference_Location :
Shenzhen
DOI :
10.1109/IEEE-IWS.2015.7164638
