• DocumentCode
    72525
  • Title

    Thermal Neutron-Induced Soft Errors in Advanced Memory and Logic Devices

  • Author

    Yi-Pin Fang ; Oates, Anthony S.

  • Author_Institution
    Semicond. Manuf. Co., Hsinchu, Taiwan
  • Volume
    14
  • Issue
    1
  • fYear
    2014
  • fDate
    Mar-14
  • Firstpage
    583
  • Lastpage
    586
  • Abstract
    Thermal neutron-induced soft errors (SERs) for memory and logic devices have reappeared as a reliability issue for advanced IC technologies due to the presence of the B10 isotope in B2H6 carrier gases used during manufacturing. Here, we show that thermal neutron SER significantly decreases with Si technology progression, becoming an insignificant contributor to overall circuit SER below the 28-nm technology node.
  • Keywords
    SRAM chips; logic devices; radiation hardening (electronics); advanced IC technologies; advanced memory devices; carrier gases; logic devices; reliability issue; thermal neutron induced soft errors; Alpha particles; Clocks; Integrated circuit modeling; Materials reliability; Neutrons; Silicon; Transistors; Thermal neutron; alpha; high-energy neutron; single event upset (SEU); soft error; soft error rate;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2013.2287699
  • Filename
    6650018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=72525