DocumentCode :
725614
Title :
Panel 9: Semiconductor technology development for transportation electrification
fYear :
2015
fDate :
14-17 June 2015
Firstpage :
1
Lastpage :
1
Abstract :
For automotive applications, there are many advantages of emerging semiconductor devices such as SiC or GaN including higher switching frequency, reduced losses, high temperature operation capability, and higher power density. With properties suitable for conducting electricity in extreme environments, they are ideal devices for applications that are subject to high voltages and temperatures, such as in electric vehicles. On the other hand, cost, reliability, and maturity are still driving factors for conventional silicon based devices. While past problems with substrate defects are rapidly being addressed and companies are working to develop more robust switches, IGBT and MOSFET technologies are also progressing towards higher performance at lower costs. This panel will discuss the needs of automotive semiconductor technology development for transportation electrification industry in order to offer high-performance and low-cost power electronic interfaces. This panel will also address WBG development issues range from fundamental science to technology development and maturation strategies with a focus on materials research, device design, packaging, manufacturing processes, system design and development, and reliability.
Keywords :
electric vehicles; semiconductor device reliability; automotive application; automotive semiconductor technology development; low-cost power electronic interface; power density; semiconductor device reliability; silicon based device; transportation electrification industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transportation Electrification Conference and Expo (ITEC), 2015 IEEE
Conference_Location :
Dearborn, MI
Type :
conf
DOI :
10.1109/ITEC.2015.7165732
Filename :
7165732
Link To Document :
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