DocumentCode
725696
Title
Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations
Author
Oshima, Azusa ; Weckx, Pieter ; Kaczer, Ben ; Kobayashi, Kazutoshi ; Matsumoto, Takashi
Author_Institution
Dept. of Electron., Kyoto Inst. of Technol., Kyoto, Japan
fYear
2015
fDate
1-3 June 2015
Firstpage
1
Lastpage
4
Abstract
Random Telegraph Noise (RTN) has become dominant with transistor rapid scaling in recent years. We simulate RTN-induced frequency fluctuation of Ring Oscillators (ROs) using a circuit-level simulator to replicate measurement results from previous works. Consequently, we can predict dependences of frequency fluctuation on operating voltages, number of ROs stages, gate widths, and body biases.
Keywords
circuit simulation; oscillators; random noise; transistor circuits; RTN-induced frequency fluctuation; body biases; circuit-level simulations; circuit-level simulator; gate widths; random telegraph noise; ring oscillators; transistor rapid scaling; Fluctuations; Integrated circuit modeling; Logic gates; Noise; Threshold voltage; Time-frequency analysis; Random Telegraph Noise; Reliability; Ring Oscillator; Variability;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design & Technology (ICICDT), 2015 International Conference on
Conference_Location
Leuven
Type
conf
DOI
10.1109/ICICDT.2015.7165891
Filename
7165891
Link To Document