Title :
I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration
Author :
Ritzenthaler, R. ; Schram, T. ; Cho, M.J. ; Mocuta, A. ; Horiguchi, N. ; Thean, A.V.-Y. ; Spessot, A. ; Caillat, C. ; Aoulaiche, M. ; Fazan, P. ; Noh, K.B. ; Son, Y.
Author_Institution :
imec, Leuven, Belgium
Abstract :
In this work, the potential of the recently demonstrated D&GR (Diffusion & Gate Replacement, [5]) for thick oxide I/O devices integration is investigated. A D&GR integration flow compliant with EOT requirements for I/O devices is demonstrated, with no penalty with regard to HKMG Non D&GR flow in terms of short channel effects and intrinsic transistor performance. Threshold voltage tuning options from 150 up to 300 mV are demonstrated, and one preferred integration route (keeping the same work function shifters for both thin and thick oxide devices) is highlighted. Finally, it is also shown that HKMG I/O devices (D&GR and non D&GR) do not suffer from reverse narrow gate width effects.
Keywords :
MOSFET; diffusion; input-output programs; semiconductor device models; D&GR integration flow compliant; EOT requirements; HKMG I-O devices; HKMG Non D&GR flow; diffusion & gate replacement; integration route; reverse narrow gate width effects; short channel effects; thick oxide I-O devices integration; thin oxide devices; threshold voltage tuning options; voltage 150 mV to 300 mV; work function shifters; High K dielectric materials; Logic gates; MOS devices; Metals; Random access memory; Threshold voltage; Transistors; Al2O3 capping layers; DRAM periphery transistors; Diffusion and Gate Replacement (D&GR); High-k; I/O devices; Metal gate; Mg capping layers;
Conference_Titel :
IC Design & Technology (ICICDT), 2015 International Conference on
Conference_Location :
Leuven
DOI :
10.1109/ICICDT.2015.7165908
