Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length

Author

Barraud, S. ; Coquand, R. ; Hartmann, J.-M. ; Maffini-Alvaro, V. ; Samson, M.-P. ; Tosti, L. ; Allain, F.

Author_Institution

LETI, Commissariat a l´Energie Atomique et aux Energies Alternatives, Grenoble, France

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1103

Lastpage

1105

Abstract

Ultrashort gate length silicon-on-insulator nanowire (NW) transistors with embedded source/drain (S/D) SiGe stressors were fabricated. An enhancement of P-FET NW performance is achieved using in situ HCl+GeH₄ etching and selective epitaxial growth of boron-doped Si_0.7Ge_0.3 for the formation of recessed S/D. For the first time, an ION current improvement of +100% along the 〈110〉 direction induced by SiGe S/D is achieved in Omega-FET NWs down to 13-nm gate length. The current enhancement coming from uniaxial compressive strain of recessed SiGe S/D stressors in narrow-channel transistors is well demonstrated (+100% versus +40% in wide planar FET).

Keywords

boron; compressive strength; epitaxial growth; etching; field effect transistors; nanowires; semiconductor doping; silicon compounds; silicon-on-insulator; NW transistors; P-FET NW performance; P-FET omega-gate SoI nanowire; Si_0.7Ge_0.3; boron-doped silicon germanide; current enhancement; embedded source/drain stressors; etching; narrow-channel transistors; omega-FET NW; selective epitaxial growth; size 13 nm; source-drain; ultrashort gate length silicon-on-insulator nanowire transistors; uniaxial compressive strain; wide planar FET; Etching; Logic gates; MOSFET; Silicon; Silicon germanium; Strain; Embedded SiGe source-drain; MOSFET; nanowire; omega-gate; silicon-on-insulator (SoI); uniaxial compressive strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2274172

Filename

6575100