DocumentCode
725944
Title
Mixed-mode class E-F−1 high efficiency GaN power amplifier for P-band space applications
Author
Formicone, Gabriele ; Custer, James
Author_Institution
Integra Technol., Inc., El Segundo, CA, USA
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
4
Abstract
A GaN based high efficiency, high power amplifier in P-band for space borne radar applications is demonstrated. It uses a single chip transistor that achieves 250W output power with greater than 80% drain efficiency from 420MHz to 450MHz, using a pulsed waveform with 10% duty cycle. The circuit topology is based on a combination of class E and inverse class F harmonic tuning.
Keywords
III-V semiconductors; UHF power amplifiers; gallium compounds; mixed analogue-digital integrated circuits; network topology; spaceborne radar; wide band gap semiconductors; GaN; GaN power amplifier; P-band space applications; circuit topology; frequency 420 MHz to 450 MHz; inverse class F harmonic tuning; mixed-mode class E-F-1; power 250 W; pulsed waveform; single chip transistor; space borne radar; Biomedical imaging; Gallium nitride; Geology; Impedance; L-band; GaN; P-band; amplifier; class E; inverse class F; radar; space; switch-mode;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7166717
Filename
7166717
Link To Document