Title :
The evolution of power combining techniques: From the 60s to today
Author :
Schellenberg, James
Author_Institution :
QuinStar Technol., Inc., Torrance, CA, USA
Abstract :
The evolution of power combining techniques is traced from the emergence of the first power microwave solid-state device, the IMPATT, to the present. The IMPATT spawned the Kurokawa and the resonant cavity combiners, while the 3-terminal device (starting with the GaAs MESFET) gave birth to planar structures using evolving MIC techniques. Two-way combiners in the form of Wilkinson, branch-line, and Lange were used to fabricate planar N-way corporate combiners in microstrip media. Non-planar radial, conical and spatial combiners emerged later to produce high-order combining and high output power. In the years since the explosive combiner growth in the 70s and early 80s, the 2-terminal device has been largely replaced by 3-terminal devices, and GaN has become the dominate power device technology at frequencies ranging from L to W-band.
Keywords :
III-V semiconductors; IMPATT diodes; Schottky gate field effect transistors; cavity resonators; gallium arsenide; microwave power transistors; power combiners; power field effect transistors; wide band gap semiconductors; GaAs; GaN; IMPATT; Kurokawa; MESFET; MIC techniques; conical combiners; impact ionization avalanche transit-time diode; microstrip media; nonplanar radial combiners; planar N-way corporate combiners; planar structures; power combining techniques; power device technology; power microwave solid-state device; resonant cavity combiners; spatial combiners; three-terminal device; two-terminal device; two-way combiners; Bandwidth; Electromagnetic heating; Electron tubes; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; IMPATT; MESFET; Power combining; power amplifiers; radial combiner; spatial combining;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166749