InP HBT transferred substrate amplifiers operating to 600 GHz

Author

Radisic, Vesna ; Scott, Dennis W. ; Monier, Cedric ; Wang, Sujane ; Cavus, Abdullah ; Gutierrez-Aitken, Augusto ; Deal, William

Author_Institution

Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

We report on two InP transferred-substrate (TS) HBT based terahertz monolithic integrated circuit (TMIC) amplifiers. The amplifiers use 200 nm InP HBTs and benzocyclobutene (BCB) inverted microstrip interconnect. The transferred substrate process removes the InP substrate and transfers the amplifiers to high thermal conductivity SiC substrate. The first amplifier is a nine stage common-emitter design. It has ~9 dB of small signal gain at 521 GHz. The second design is five-stage common-base amplifier. It has demonstrated gain of ~19 dB at 576 GHz. These are first reported TS InP HBT amplifiers above 200 GHz.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit interconnections; microstrip lines; organic compounds; submillimetre wave amplifiers; thermal conductivity; InP; InP HBT transferred substrate amplifiers; SiC substrate; TMIC amplifiers; benzocyclobutene; five-stage common-base amplifier; frequency 521 GHz; frequency 576 GHz; frequency 600 GHz; inverted microstrip interconnect; nine stage common-emitter design; size 200 nm; terahertz monolithic integrated circuit amplifiers; thermal conductivity; Capacitors; Gain; HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Substrates; Amplifier; HBT; monolithic microwave integrated circuit (MMIC); sub-millimeter wave; transferred substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166750

Filename

7166750