Title :
200-260GHz solid state amplifier with 700mW of output power
Author :
Gritters, Darin ; Brown, Ken ; Ko, Elbert
Author_Institution :
Teledyne Sci. & Imaging, Raytheon Missile Syst., Griffith, IN, USA
Abstract :
Recent advances in high power millimeter wave (mmW) Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT) Power Amplifier (PA) technology combined with advances in high-frequency power combining have enabled the development of a 200-260GHz solid state power amplifier producing >700mW of output power. This paper outlines the development of a 50mW+ InP HBT PA Monolithic Millimeter wave Integrated Circuit (MMIC) and the technology associated with the subsequent power combining of 32 of these PA MMICs.
Keywords :
MMIC power amplifiers; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; power combiners; InP; PA MMIC; frequency 200 GHz to 260 GHz; heterojunction bipolar transistor; high-frequency power combining; indium phosphide; mmW HBT PA technology; monolithic millimeter wave integrated circuit; power 700 mW; solid state power amplifier technology; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; MMICs; Millimeter wave technology; Oscillators; Radio frequency; Heterojunction Bipolar Transistor; Indium Phosphide; Millimeter Wave; Power Amplifier; Power Combining;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166808
