Title :
Parametric hysteresis in power amplifiers
Author :
de Cos, Jesus ; Suarez, Almudena ; Garcia, Jose Angel
Author_Institution :
Dept. of Commun. Eng., Univ. of Cantabria, Santander, Spain
Abstract :
Parametric hysteresis in power amplifiers is investigated, studying the causes of this phenomenon and providing an efficient methodology for its prediction and elimination. As will be demonstrated, in MESFET and HEMT devices it is caused by a nonlinear resonance of the device input capacitance under near optimum input matching conditions. Bifurcation loci are used to evaluate the impact of the phenomenon under variation of critical design parameters. All the tests have been carried out in a Class -E GaN PA with measured 86.8% PAE and 12.4W output power at 0.9 GHz .
Keywords :
III-V semiconductors; UHF amplifiers; gallium compounds; hysteresis; power HEMT; power MESFET; power amplifiers; GaN; HEMT device; MESFET device; bifurcation loci; class-E PA; device input capacitance; frequency 0.9 GHz; nonlinear resonance; parametric hysteresis; power 12.4 W; power amplifiers; Gallium nitride; Hysteresis; Logic gates; Bifurcation; GaN; PAE; class-E; harmonic balance (HB); hysteresis; power amplifier; stability;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166823
