Correction of DC extracted parameters for microwave MOSFETs based on S-parameter measurements

The determination of parameters for microwave MOSFETs using DC methods requires that the effect of the biasdependent S/D resistances be removed. This becomes more important as technologies evolve, since this procedure becomes less straightforward. If not taken into account, incorrect values for the basic parameters for the MOSFET are obtained, especially those associated with the channel. To solve this problem, RF measurements can be performed at different biasconditions to extract and subtract the parasitic components from the total resistance, which allow us to accurately define the desired parameters.