Title :
A 206 ∼ 220 GHz CMOS VCO using body-bias technique for frequency tuning
Author :
Po-Han Chiang ; Jen-Hao Cheng ; Yi-Ching Wu ; Chau-Ching Chiong ; Wen-De Liu ; Guo-Wei Huang ; Tian-Wei Huang ; Huei Wang
Author_Institution :
Inst. of Astron. & Astrophys., Taipei, Taiwan
Abstract :
A 206 ~ 220 GHz varactor-free voltage-controlled oscillator (VCO) is proposed to improve the output power and tuning range. The topology of the VCO is push-push cross-coupled pair. By using body-bias technique, the parasitic capacitor of the cross-coupled pair can be adjusted, and the varactors in the conventional VCO design can be removed. The proposed VCO was designed and implemented in TSMC 65-nm CMOS technology with a chip size of 0.25 × 0.25 mm2. The tuning range is 6.6% (from 206.2 to 220 GHz). The measured phase noise is -66 dBc/Hz at 1 MHz offset frequency. The output power is 1.3 dBm at 216 GHz with 54-mW dc power consumption and its maximum dc-to-RF efficiency is 2.1%. To the best of our knowledge, this varactor-free VCO achieves the highest dc-to-RF efficiency among published CMOS VCOs around 200 GHz.
Keywords :
CMOS integrated circuits; field effect MIMIC; millimetre wave oscillators; voltage-controlled oscillators; CMOS integrated circuit; body bias frequency tuning technique; frequency 206.2 GHz to 220 GHz; parasitic capacitor; push-push cross-coupled pair; size 65 nm; varactor-free VCO; voltage controlled oscillator; Biomedical imaging; CMOS integrated circuits; Oscillators; CMOS; Voltage-controlled oscillator (VCO); body-bias; dc-to-RF efficiency;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166853