DocumentCode
726041
Title
A new description of fast charge-trapping effects in GaN FETs
Author
Bosi, G. ; Raffo, A. ; Vadala, V. ; Vannini, G.
Author_Institution
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
4
Abstract
A nonlinear multi-bias model oriented to accurately predict the effects of charge-trapping in Gallium Nitride (GaN) HEMTs is proposed. As a case study, we considered a 0.25-μm 8×75-μm GaN HEMT. The model is identified by using CW low-frequency time-domain data and validated through high-frequency vector nonlinear measurements.
Keywords
III-V semiconductors; field effect transistors; gallium compounds; high electron mobility transistors; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; CW low-frequency time-domain data; FET; HEMT; charge-trapping effects; high-frequency vector nonlinear measurements; nonlinear multi-bias model; size 0.25 mum; size 75 mum; Charge carrier processes; Field effect transistors; Performance evaluation; Radio frequency; Gallium nitride; charge trapping; nonlinear model;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7166857
Filename
7166857
Link To Document