Title :
Reconfigurable inline phase-change switches for broadband applications
Author :
El-Hinnawy, N. ; Borodulin, P. ; Torpey, M. ; Kuss, F. ; Ezis, A. ; Paramesh, J. ; Bain, J. ; Schlesinger, T.E. ; Howell, R.S. ; Lee, M.J. ; Nichols, D. ; Young, R.M.
Author_Institution :
Northrop Grumman Electron. Syst., Linthicum, MD, USA
Abstract :
Improvements to the GeTe inline phase-change switch (IPCS) technology have resulted in a 10× increase in the figure-of-merit (FOM) for radio-frequency (RF) switches. An ON-state resistance of 0.9 Ω (0.027 Ω·mm) with an OFF-state capacitance and resistance of 14.1 fF and 30 kΩ, respectively, were measured. This results in a switch cutoff frequency (Fco) of 12.5 THz, with an OFF/ON resistance ratio of 10,000:1. Passive RF circuits have been built with these switches to compare their frequency performance to state-of-the-art technologies, as well as to demonstrate fine-grain reconfigurability in RF circuits. Further analysis of 8-port omni-directional IPCS switches used in a reconfigurable transceiver demonstrates less than 2dB degradation in gain and 1dB in noise figure when reconfiguring a single chip for 4 different receiver chain frequencies (S-band, X-band, Iridium, and CDL-Ku), demonstrating the feasibility of IPCS devices for low-power, broadband reconfigurable RF systems.
Keywords :
germanium compounds; microwave switches; passive networks; radiofrequency integrated circuits; transceivers; GeTe; OFF-state capacitance; ON-state resistance; S-band; X-band; broadband application; capacitance 14.1 fF; inline phase-change switch technology; omni-directional IPCS switches; passive RF circuits; radio-frequency switches; reconfigurable IPCS technology; reconfigurable transceiver; resistance 0.9 ohm; resistance 30 kohm; Heating; Indexes; Integrated circuit interconnections; Magnetic circuits; Radio frequency; Switches; Transceivers; GeTe; IPCS; RF switch; germanium telluride; inline phase-change switch; reconfigurable; tunable filter;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166859