Extraction of accurate GaN HEMT model for high-efficiency power amplifier design

Author

Vadala, Valeria ; Raffo, Antonio ; Avolio, Gustavo ; Marchetti, Mauro ; Schreurs, Dominique M. M.-P ; Vannini, Giorgio

Author_Institution

Dept. of Eng., Univ. of Ferrara, Ferrara, Italy

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measurements under class-F operation. Thanks to this technique, applied for the first time to high-efficiency classes of operation, one can get at once and separately the nonlinear currents and charges of the transistor in actual operating conditions. As case study a 0.25-μm GaN HEMT is considered. The model has been fully validated through comparison with harmonic load-pull measurements carried out at 5 GHz.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; HEMT model extraction; class-F operation; dynamic bias measurements; frequency 5 GHz; harmonic load-pull measurements; high-efficiency classes; high-efficiency power amplifier design; nonlinear charges; nonlinear currents; nonlinear model; size 0.25 mum; transistor; Current measurement; Frequency measurement; HEMTs; Indexes; Load modeling; Loss measurement; Phase measurement; microwave FET; nonlinear microwave measurements; nonlinear transistor model; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166866

Filename

7166866