Title :
Electronic frequency tuning of a high-power 2.45GHz GaN oscillator
Author :
Bansleben, Christian ; Heinrich, Wolfgang
Author_Institution :
Ferdinand-Braun-Inst. (FBH), Leibniz-Inst. fuer Hoechstfrequenztechnik, Berlin, Germany
Abstract :
High-power solid-state microwave oscillators are useful for various applications. However, electronic frequency tuning has been a problem so far, due to the high voltage and current swings involved. This paper presents a solution for a high-power 2.45 GHz oscillator, using GaN transistors and SiC varactors. The VCO provides a peak output power of 56 W which can be tuned within the entire 2.45 GHz ISM band with 2.7 dB power ripple and an efficiency of more than 35%.
Keywords :
III-V semiconductors; gallium compounds; microwave oscillators; silicon compounds; transistors; varactors; wide band gap semiconductors; GaN; ISM band; SiC; current swings; electronic frequency tuning; frequency 2.45 GHz; high-power solid-state microwave oscillators; power 56 W; power ripple; Capacitance; HEMTs; Oscillators; Q measurement; Tuning; Varactors; GaN; Schottky; SiC; VCO; generator; power oscillator; varactor;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166904
