RF characterization and modeling of CMOS Schottky diodes

In this paper, we present a fully fledged physical-based equivalent circuit model for Si Schottky diodes fabricated by standard 130nm CMOS technology in which I-V, C-V and RF performance are covered. Different current transport mechanisms including high injection, tunneling effect together with thermionic emission are included in the I-V model, while the substrate parasitic effect are added in describing RF performance. All the parameters are extracted via a straightforward step-by-step procedure. The scalability of the core model is demonstrated for the first time. The proposed model is evaluated from measurement up to 67 GHz and the extracted results agree well with the measured data.