Title :
An improved equivalent circuit model based on the CMOS on-chip multiple coupled inductors from DC to millimeter-wave region
Author :
Zongzhi Gao ; Xin Cao ; Yunqiu Wu ; Kai Kang
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, an improved equivalent circuit model of multiple coupled inductors is proposed, as well as the parameter extraction method. First, the characteristics of the on-chip inductors are analyzed. Then according to electromagnetic properties of multiple coupled inductors, the improved equivalent model, which considers more parasitic effects among inductors, as well as the parameter extraction method are presented. The measurement structures are fabricated by the 0.18μm and 90nm CMOS technologies. It will be shown that the simulated results of the model are in good agreement with the measured results from DC up to millimeter-wave range and the validation of the proposed model is verified.
Keywords :
CMOS integrated circuits; coupled circuits; equivalent circuits; inductors; millimetre wave integrated circuits; CMOS on-chip multiple coupled inductor; DC region; complementary metal oxide semiconductor; electromagnetic property; equivalent circuit model; millimeter-wave region; parameter extraction method; parasitic effect; size 0.18 mum; size 90 nm; Analytical models; Couplings; Semiconductor device measurement; CMOS; equivalent circuit model; millimeter-wave range; multiple coupled inductors;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166917
