Title :
Low loss dielectric ridge waveguide based on high resistivity silicon for E11y Mode Propagation at 750–1000GHz
Author :
Haotian Zhu ; Quan Xue ; Pang, Stella W. ; Jianan Hui ; Xinghai Zhao
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong, China
Abstract :
In this paper, dielectric ribbon waveguides (DRWs) are designed to work at 750-1000 GHz. In this frequency band, the Deep Reactive Ion Etching (DRIE) of high resistivity silicon fabrication process is selected to fabricate the DRW. Our experiments show that the average attenuation constant of DRW is merely 0.107dB/mm at 750-1000GHz. Good agreements between the measured and simulated results are observed.
Keywords :
dielectric waveguides; ridge waveguides; silicon; sputter etching; Ey11 mode propagation; Si; deep reactive ion etching; dielectric ribbon waveguides; frequency 750 GHz to 1000 GHz; high resistivity silicon; low loss dielectric ridge waveguide; Attenuation measurement; Bandwidth; Energy measurement; Extraterrestrial measurements; Fabrication; Frequency measurement; Deep Reactive Ion Etch (DRIE); Dielectric Ridge Waveguide (DRW); high resistivity silicon;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166975
