Title :
An MMIC low-noise amplifier design technique
Author :
Varonen, M. ; Reeves, R. ; Kangaslahti, P. ; Samoska, L. ; Cleary, K. ; Akgiray, A. ; Gawande, R. ; Fung, A. ; Gaier, T. ; Weinreb, S. ; Readhead, A.C.S. ; Lawrence, C. ; Sarkozy, S. ; Lai, R.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
In this paper we propose a parallel two-finger unit transistor MMIC low-noise amplifier design technique which enables the design of wideband and high linearity low-noise amplifiers with very stable, predictable, and repeatable operation. We prove the feasibility of the proposed design technique by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.
Keywords :
HEMT integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; network synthesis; HEMT technology; InP; MMIC; WR10 waveguide housing; frequency 75 GHz to 116 GHz; gain 20 dB; high linearity low noise amplifier; low noise amplifier design technique; size 35 nm; two finger unit transistor; Extraterrestrial measurements; HEMTs; III-V semiconductor materials; Indium phosphide; MMICs; Topology; Wiring; Cryogenic; InP HEMT; MMIC; low-noise amplifiers (LNAs);
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166997
