Title :
Application of InP HEMT to Sub-millimeter wave atmospheric sensing
Author :
Leong, K. ; Mei, X.B. ; Zamora, A. ; Shih, S. ; Deal, W.R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
The operating frequency of InP integrated circuits has pushed well into the Submillimeter wave frequency band, with amplification reported to 1 THz (1,000 GHz). This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter wave radiometers for earth remote sensing.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; radiometers; remote sensing; submillimetre wave detectors; InP; InP HEMT; InP integrated circuits; earth remote sensing; submillimeter wave atmospheric sensing; submillimeter wave frequency band; submillimeter wave radiometers; Earth; III-V semiconductor materials; Indexes; Indium phosphide; Noise; Pollution measurement; Sensors; HEMT; Indium Phosphide; Submillimeter wave;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7167011
