Large-signal modeling of on-wafer microwave transistors based on response surface methodology

Author

Barmuta, Pawe ; Avolio, Gustavo ; Ferranti, Francesco ; Lewandowski, Arkadiusz ; Schreurs, Dominique

Author_Institution

Dept. of Electr. Eng., KU Leuven, Leuven, Belgium

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; response surface methodology; semiconductor device models; Chalmers model; GaAs; automated model extraction; behavioral modeling approach; large-signal model; on-wafer microwave transistor; pHEMT; response surface methodology; size 0.15 mum; Bismuth; Europe; Harmonic analysis; PHEMTs; Time-frequency analysis; active device modeling; behavioral modeling; experimental design; response surface;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167029

Filename

7167029