Title :
Wideband CMOS decoupling power line for millimeter-wave applications
Author :
Amakawa, S. ; Goda, R. ; Katayama, K. ; Takano, K. ; Yoshida, T. ; Fujishima, M.
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Hiroshima, Japan
Abstract :
A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.
Keywords :
CMOS integrated circuits; electromagnetic interference; field effect MIMIC; transmission lines; waveguides; frequency 20 GHz to 170 GHz; frequency 220 GHz to 325 GHz; high frequency characteristic impedance circuits; low DC resistance millimeter wave circuits; millimeter wave applications; size 0.3 mm; wideband CMOS decoupling power line; wideband decoupling power line; Capacitors; Method of moments; Resistance; bypass capacitor; characteristic impedance; power integrity; radio-frequency interference; transmission line;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7167043
