Title :
A 120 watt GaN power amplifier MMIC utilizing harmonic tuning circuits for S-band applications
Author :
Alexander, Andrew ; Leckey, Jonathan
Author_Institution :
M/A-COM Technol. Solutions, Belfast, UK
Abstract :
The design of a 120 Watt S-band GaN power amplifier MMIC is presented. The amplifier was designed using the 0.25um GaN on SiC process from GCS. At Vds= 40V, this two stage amplifier achieved greater than 135W saturated output power, with higher than 47% power added efficiency and with 22dB gain in the 2.8 - 3.5 GHz band. Additionally mid band output power of 195W was achieved at Vds=50V. This result is the highest power ever reported for a two stage GaN MMIC. The use of input and output harmonic terminations for broadband efficiency enhancement was demonstrated.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; gallium compounds; integrated circuit design; silicon compounds; wide band gap semiconductors; GaN; MMIC power amplifier; SiC; frequency 2.8 GHz to 3.5 GHz; gain 22 dB; harmonic tuning circuits; power 120 W; power 195 W; power added efficiency; size 0.25 mum; voltage 40 V; voltage 50 V; Atmospheric measurements; Frequency measurement; Gallium nitride; Load modeling; Particle measurements; Power generation; Silicon carbide; GaN HEMT; MMIC; Power Amplifier;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7167045
