An 8-element 400 GHz phased-array in 45 nm CMOS SOI

Author

Yang, Y. ; Gurbuz, O. ; Rebeiz, G.M.

Author_Institution

Univ. of California, San Diego, La Jolla, CA, USA

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

This paper presents an RF-beamforming phased-array with operation at 375-405 GHz. The phased-array is built using 45 nm CMOS SOI and is based on quadruplers at each antenna element which convert the RF signal from 95-105 GHz to 360-420 GHz. The antennas are high efficiency microstrip design with > 44% radiation efficiency (including the CMOS metal fill) due to the use of a 100 μm-thick quartz superstrate layer. The 8-element linear array scans over +/- 35° of angular space, and results in a peak EIRP of 5 dBm and a 3-dB bandwidth of 375- 405 GHz (EIRP > 2 dBm). To our knowledge, this is the first phased-array with scanned patterns at > 300 GHz using CMOS.

Keywords

CMOS integrated circuits; antenna phased arrays; linear antenna arrays; millimetre wave antenna arrays; silicon-on-insulator; 8-element linear array; CMOS SOI process; CMOS metal fill; RF signal; RF-beamforming phased-array; antenna element; antenna phased-array; bandwidth 360 GHz to 420 GHz; bandwidth 375 GHz to 405 GHz; bandwidth 95 GHz to 105 GHz; gain 3 dB; quartz superstrate layer; size 100 mum; size 45 nm; CMOS integrated circuits; CMOS technology; Solids; CMOS SOI; Phased-array;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167072

Filename

7167072