• DocumentCode
    726234
  • Title

    300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

  • Author

    Katayama, K. ; Amakawa, S. ; Takano, K. ; Fujishima, M.

  • Author_Institution
    Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
  • fYear
    2015
  • fDate
    17-22 May 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.
  • Keywords
    CMOS integrated circuits; MOSFET; millimetre wave field effect transistors; semiconductor device models; LP CMOS process; MOSFET model; cold-bias de-embedding technique; frequency 300 GHz; frequency 330 GHz; size 32 mum; size 65 nm; CMOS integrated circuits; MOSFET; Semiconductor device modeling; J-band; MOSFET; millimeter-wave; modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2015 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/MWSYM.2015.7167118
  • Filename
    7167118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=726234