Title :
300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique
Author :
Katayama, K. ; Amakawa, S. ; Takano, K. ; Fujishima, M.
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.
Keywords :
CMOS integrated circuits; MOSFET; millimetre wave field effect transistors; semiconductor device models; LP CMOS process; MOSFET model; cold-bias de-embedding technique; frequency 300 GHz; frequency 330 GHz; size 32 mum; size 65 nm; CMOS integrated circuits; MOSFET; Semiconductor device modeling; J-band; MOSFET; millimeter-wave; modeling;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7167118
