Distributed modeling of submillimeter-wave HEMT parasitics based on full-wave electromagnetic analysis

Author

Karisan, Yasir ; Caglayan, Cosan ; Trichopoulos, Georgios C. ; Sertel, Kubilay

Author_Institution

ElectroScience Lab., Ohio State Univ., Columbus, OH, USA

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

We present a broadband distributed parasitic equivalent circuit model to accurately reproduce the frequency response of electromagnetic (EM) field couplings within the structure of submillimeter-wave (sub-mmW) high electron mobility transistors (HEMTs) in terahertz (THz) band. We also develop a novel systematic multi-step parameter extraction algorithm. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave (FW) simulated, measured, and modeled frequency responses of the presented test standards up to 750 GHz.

Keywords

electromagnetic coupling; electromagnetic fields; equivalent circuits; frequency response; high electron mobility transistors; semiconductor device models; broadband distributed parasitic equivalent circuit model; distributed modeling; electromagnetic field couplings; frequency response; full-wave electromagnetic analysis; high electron mobility transistors; submillimeter-wave HEMT parasitics; systematic multi-step parameter extraction algorithm; terahertz band; Electrodes; Impedance; Integrated circuit modeling; Logic gates; Noise measurement; Programmable logic arrays; Scattering parameters; HEMT; distributed parasitic equivalent circuit model; electromagnetic coupling; layout optimization;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167126

Filename

7167126