DocumentCode
726247
Title
AlGaN/GaN HEMT nonlinear model fitting including a trap model
Author
Tarazi, Jabra ; Schwitter, Bryan K. ; Parker, Anthony E. ; Mahon, Simon J.
Author_Institution
Dept. of Eng., Macquarie Univ., Sydney, NSW, Australia
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
4
Abstract
A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device measurement; semiconductor device models; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT nonlinear model fitting; SiC; load-pull measurements; nonlinear device model; trap model; Artificial intelligence; Gallium nitride; Metals; Transconductance; Gallium nitride; self-heating; semiconductor device modeling; trapping;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7167138
Filename
7167138
Link To Document