DocumentCode :
726464
Title :
FlexLevel: A novel NAND flash storage system design for LDPC latency reduction
Author :
Jie Guo ; Wujie Wen ; Jingtong Hu ; Danghui Wang ; Hai Li ; Yiran Chen
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Pittsburgh, Pittsburgh, PA, USA
fYear :
2015
fDate :
8-12 June 2015
Firstpage :
1
Lastpage :
6
Abstract :
LDPC code is introduced in NAND flash memory to handle high BER (bit error rate) incurred by technology scaling. Despite strong error correction capability, LDPC decoding induces long NAND flash read latency. In this work, we propose FlexLevel - a robust NAND flash storage system design to improve data reliability and read efficiency affected by the LDPC operations. FlexLevel first reduces BER by enlarging noise margins via Vth (threshold voltage) level reduction. It reduces the sensing levels of LDPC but also causes loss of storage capacity. To compensate this capacity loss with minimum impact on read performance, FlexLevel identifies the data with high LDPC overhead and only applies the Vth level reduction technique to those data. Experimental results show that compared with state-of-the-art, FlexLevel can achieve up to 33% read speedup with very moderate capacity loss.
Keywords :
NAND circuits; error correction codes; error statistics; flash memories; parity check codes; BER; FlexLevel; LDPC code; LDPC latency reduction; NAND flash read latency; NAND flash storage system design; Vth level reduction technique; bit error rate; data reliability; error correction capability; read efficiency; technology scaling; threshold voltage level reduction; Ash; Bit error rate; Interference; Logic gates; Noise; Parity check codes; Sensors; LDPC; NAND flash memories; bit error rate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (DAC), 2015 52nd ACM/EDAC/IEEE
Conference_Location :
San Francisco, CA
Type :
conf
DOI :
10.1145/2744769.2744843
Filename :
7167379
Link To Document :
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