DocumentCode :
726693
Title :
Application benefits achieved utilizing IGBT5-based power semiconductors
Author :
Schulz, Martin ; Brieke, Dirk ; Nagarajan, Raghavan ; Zhao, Zhen Bo
Author_Institution :
Infineon Technologies, Warstein, Germany
fYear :
2015
fDate :
1-5 June 2015
Firstpage :
1823
Lastpage :
1826
Abstract :
This paper deals with the thermal aspects that arise from using the next generation of high power semiconductors featuring a maximum operating temperature for the 5th generation IGBT of 175°C. The benefits that arise for the application and the points that need to be considered beyond the semiconductors are evaluated using a hardware demonstrator.
Keywords :
Density measurement; Insulated gate bipolar transistors; Multichip modules; Power system measurements; Soldering; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location :
Seoul, South Korea
Type :
conf
DOI :
10.1109/ICPE.2015.7168026
Filename :
7168026
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=726693
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