• DocumentCode
    726693
  • Title

    Application benefits achieved utilizing IGBT5-based power semiconductors

  • Author

    Schulz, Martin ; Brieke, Dirk ; Nagarajan, Raghavan ; Zhao, Zhen Bo

  • Author_Institution
    Infineon Technologies, Warstein, Germany
  • fYear
    2015
  • fDate
    1-5 June 2015
  • Firstpage
    1823
  • Lastpage
    1826
  • Abstract
    This paper deals with the thermal aspects that arise from using the next generation of high power semiconductors featuring a maximum operating temperature for the 5th generation IGBT of 175°C. The benefits that arise for the application and the points that need to be considered beyond the semiconductors are evaluated using a hardware demonstrator.
  • Keywords
    Density measurement; Insulated gate bipolar transistors; Multichip modules; Power system measurements; Soldering; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
  • Conference_Location
    Seoul, South Korea
  • Type

    conf

  • DOI
    10.1109/ICPE.2015.7168026
  • Filename
    7168026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=726693