• DocumentCode
    727084
  • Title

    Stability analysis supports memristor circuit design

  • Author

    Ascoli, Alon ; Tetzlaff, Ronald ; Slesazeck, S. ; Mahne, H. ; Mikolajick, T.

  • Author_Institution
    Inst. fur Grundlagen der Elektrotechnik und Elektron., TUD, Dresden, Germany
  • fYear
    2015
  • fDate
    24-27 May 2015
  • Firstpage
    1138
  • Lastpage
    1141
  • Abstract
    In this paper1 a stability analysis sheds light into aspects of memristor circuit design, revealing a circuit theoretic technique for the stabilization of the NDR portion of the device DC characteristic. This type of studies supports the work of designers exploring memristor potential in electronics. Concepts from nonlinear dynamics theory allow us to gain a deep understanding of the dynamics of our locally-active memristor. The analysis provides hints on how to design an oscillator where limit-cycle behavior emerges from the locally-active threshold switching of the memristor, as theoretically proved here.
  • Keywords
    circuit stability; circuit theory; memristor circuits; oscillators; DC characteristic; NDR portion; circuit theoretic technique; limit-cycle behavior; locally-active threshold switching; memristor circuit design; negative differential resistance; nonlinear dynamics theory; oscillator; stability analysis; Integrated circuit modeling; Local activities; Mathematical model; Memristors; Oscillators; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
  • Conference_Location
    Lisbon
  • Type

    conf

  • DOI
    10.1109/ISCAS.2015.7168839
  • Filename
    7168839