DocumentCode
727084
Title
Stability analysis supports memristor circuit design
Author
Ascoli, Alon ; Tetzlaff, Ronald ; Slesazeck, S. ; Mahne, H. ; Mikolajick, T.
Author_Institution
Inst. fur Grundlagen der Elektrotechnik und Elektron., TUD, Dresden, Germany
fYear
2015
fDate
24-27 May 2015
Firstpage
1138
Lastpage
1141
Abstract
In this paper1 a stability analysis sheds light into aspects of memristor circuit design, revealing a circuit theoretic technique for the stabilization of the NDR portion of the device DC characteristic. This type of studies supports the work of designers exploring memristor potential in electronics. Concepts from nonlinear dynamics theory allow us to gain a deep understanding of the dynamics of our locally-active memristor. The analysis provides hints on how to design an oscillator where limit-cycle behavior emerges from the locally-active threshold switching of the memristor, as theoretically proved here.
Keywords
circuit stability; circuit theory; memristor circuits; oscillators; DC characteristic; NDR portion; circuit theoretic technique; limit-cycle behavior; locally-active threshold switching; memristor circuit design; negative differential resistance; nonlinear dynamics theory; oscillator; stability analysis; Integrated circuit modeling; Local activities; Mathematical model; Memristors; Oscillators; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location
Lisbon
Type
conf
DOI
10.1109/ISCAS.2015.7168839
Filename
7168839
Link To Document