Physical characterization of steady-state temperature profiles in three-dimensional integrated circuits

The thermal performance of three-dimensional integrated circuits is influenced by a number of design and technology parameters. However, the relationship between these parameters and thermal behaviour of die stacks is complex and not well understood. In this paper, we perform a detailed evaluation of the influence of stack composition and depth, thickness of dies, physical location of power dissipating elements and stack power density on steady-state temperature profiles. We examine how each of these parameters affects heat spread within 3D ICs, and highlight the causes for hotspot formation. The results of our analysis illustrate the implications of effective thermal conductivity on temperature sensing zones on dies, and the significant impact of stack power density on overall operating temperature.