$\hbox {Ga}_{2} \hbox {O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$

We fabricated gallium oxide $(\hbox {Ga}_{2} \hbox {O}_{3})$ Schottky barrier diodes using $\beta {-}\hbox {Ga}_{2} \hbox {O}_{3}$ single-crystal substrates produced by the floating-zone method. The crystal quality of the substrates was excellent; the X-ray diffraction rocking curve peak had a full width at half-maximum of 32 arcsec, and the etch pit density was less than $\hbox {1} \times \hbox {10}^{4} \hbox {cm}^{-2}$ . The devices exhibited good characteristics, such as an ideality factor close to unity and a reasonably high reverse breakdown voltage of about 150 V. The Schottky barrier height of the $\hbox {Pt}/\beta$ – $\hbox {Ga}_{2} \hbox {O}_{3}$ interface was estimated to be 1.3–1.5 eV.