Title :
Can Interface Traps Suppress TFET Ambipolarity?
Author :
Beneventi, Giovanni Betti ; Gnani, Elena ; Gnudi, A. ; Reggiani, S. ; Baccarani, G.
Author_Institution :
DEI, Univ. of Bologna, Bologna, Italy
Abstract :
The impact of semiconductor/oxide interface traps (ITs) on the turn-on characteristics of tunnel field-effect transistors (TFETs) is carefully investigated through TCAD. IT density is treated as a 2-D continuum. Both a conventional and an advanced nanowire TFET, designed to fulfill ITRS specs, are addressed. Surprisingly, in conventional TFETs, high concentrations of acceptor-like ITs can suppress device ambipolarity, thus reducing transistor´s OFF-state current.
Keywords :
field effect transistors; interface states; nanowires; technology CAD (electronics); tunnel transistors; 2D continuum; IT density; ITRS specs; TCAD; TFET ambipolarity; advanced nanowire TFET; interface traps; off-state current reduction; semiconductor-oxide interface traps; tunnel field-effect transistors; turn-on characteristics; Aluminum oxide; Electron traps; Field effect transistors; Logic gates; Semiconductor process modeling; Tunneling; Ambipolarity; InAs; band-to-band tunneling (BTBT); interface traps; tunnel field-effect transistor (TFET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2284290
