Hydrogen profile measurement of (Pb,La)(Zr,Ti)O3 capacitor with conductive electrode after hydrogen annealing

Author

Takada, Yoko ; Okamoto, Naoki ; Saito, Takeyasu ; Kondo, Kazuo ; Yoshimura, Takeshi ; Fujimura, Norifumi ; Higuchi, Koji ; Kitajima, Akira ; Iwai, Hideo ; Shishido, Rie

Author_Institution

Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan

fYear

2015

fDate

24-27 May 2015

Firstpage

163

Lastpage

166

Abstract

We fabricated ferroelectric (Pb,La)(Zr,Ti)O₃ (PLZT) capacitors with Pt, Al:ZnO, or Sn:In₂O₃ top electrodes. The remnant polarization decreased for these PLZT capacitors after forming gas (3%H₂/balance N₂) annealing at 200°C and 1 Torr, especially for PLZT capacitor with Pt top electrodes due to the catalytic effect of Pt. The time-of-flight secondary ion mass spectrometry depth profile showed that the hydrogen content in PLZT thin films with Pt top electrode increased ca. 2.7 times after forming gas annealing compared with ca. 1.2 times with other electrodes.

Keywords

annealing; electrodes; ferroelectric capacitors; lanthanum compounds; lead compounds; secondary ion mass spectra; time of flight mass spectra; (PbLa)(ZrTi)O₃; catalytic effect; conductive electrode; ferroelectric capacitor; hydrogen annealing; hydrogen profile measurement; remnant polarization; time-of-flight secondary ion mass spectrometry; Annealing; Capacitors; Electrodes; Hydrogen; Indium tin oxide; Nonvolatile memory; Random access memory; (Pb,La)(Zr,Ti)O3 thin film; ferroelectric capacitor; forming gas annealing; non-noble oxide electrode; time-of-flight secondary ion mass spectrometry;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the

Conference_Location

Singapore

Type

conf

DOI

10.1109/ISAF.2015.7172695

Filename

7172695