Title :
Hydrogen profile measurement of (Pb,La)(Zr,Ti)O3 capacitor with conductive electrode after hydrogen annealing
Author :
Takada, Yoko ; Okamoto, Naoki ; Saito, Takeyasu ; Kondo, Kazuo ; Yoshimura, Takeshi ; Fujimura, Norifumi ; Higuchi, Koji ; Kitajima, Akira ; Iwai, Hideo ; Shishido, Rie
Author_Institution :
Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan
Abstract :
We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Pt, Al:ZnO, or Sn:In2O3 top electrodes. The remnant polarization decreased for these PLZT capacitors after forming gas (3%H2/balance N2) annealing at 200°C and 1 Torr, especially for PLZT capacitor with Pt top electrodes due to the catalytic effect of Pt. The time-of-flight secondary ion mass spectrometry depth profile showed that the hydrogen content in PLZT thin films with Pt top electrode increased ca. 2.7 times after forming gas annealing compared with ca. 1.2 times with other electrodes.
Keywords :
annealing; electrodes; ferroelectric capacitors; lanthanum compounds; lead compounds; secondary ion mass spectra; time of flight mass spectra; (PbLa)(ZrTi)O3; catalytic effect; conductive electrode; ferroelectric capacitor; hydrogen annealing; hydrogen profile measurement; remnant polarization; time-of-flight secondary ion mass spectrometry; Annealing; Capacitors; Electrodes; Hydrogen; Indium tin oxide; Nonvolatile memory; Random access memory; (Pb,La)(Zr,Ti)O3 thin film; ferroelectric capacitor; forming gas annealing; non-noble oxide electrode; time-of-flight secondary ion mass spectrometry;
Conference_Titel :
Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the
Conference_Location :
Singapore
DOI :
10.1109/ISAF.2015.7172695
