Title :
Mn-doped PMN-PT thin films for electrocaloric applications
Author :
Kleiner, A. ; Suchaneck, G. ; Eydam, A. ; Gerlach, G. ; Liu, L. ; Gunther, A. ; Neumann, N.
Author_Institution :
Solid State Electron. Lab., Tech. Univ. Dresden, Dresden, Germany
Abstract :
In this work, lead magnesium niobate-lead titanate (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 ((1-x)PMN-xPT) thin films with PT-fractions of 6.5 to 20% were fabricated on Pt(111)-coated Si wafers by multi-target reactive sputtering using four metallic targets (Pb, Mg, Nb, Ti). In order to increase the dielectric strength, co-doping with Mn was performed by co-sputtering of MnO targets. The electrocaloric temperature change ΔTEC was estimated using Maxwell´s relation. Additionally, the EC coefficient ΔTEC/ΔE was evaluated by integrating the electric field dependence of the pyroelectric coefficient determined by a high-frequency laser intensity modulation method.
Keywords :
dielectric thin films; doping; electric strength; lead compounds; manganese; pyroelectricity; sputter deposition; Maxwell relation; PMN-PbTiO3:Mn; Pt(111)-coated Si wafers; Pt-Si; codoping; dielectric strength; electric field dependence; electrocaloric applications; electrocaloric coefficient; electrocaloric temperature change; high-frequency laser intensity modulation method; lead magnesium niobate-lead titanate thin films; metallic targets; multitarget reactive sputtering; pyroelectric coefficient; Films; Lead; Niobium; Silicon; Sputtering; Substrates; Temperature; PMN-PT; electrocaloric properties; multi-target reactive sputtering;
Conference_Titel :
Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the
Conference_Location :
Singapore
DOI :
10.1109/ISAF.2015.7172705
