Title :
The orientation controlled (Pb,La)(Zr,Ti)O3 capacitor for improved reliabilities
Author :
Saito, Takeyasu ; Amano, Taiga ; Takada, Yoko ; Okamoto, Naoki ; Kondo, Kazuo ; Yoshimura, Takeshi ; Fujimura, Norifumi ; Higuchi, Koji ; Kitajima, Akira
Author_Institution :
Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan
Abstract :
We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors by pulsed laser deposition (PLD) and investigated the effects of substrate temperature during PLD, Pb contents of the target, annealing temperature and period to improve ferroelectric properties. The R.T. deposition with higher Pb contents in the target (1.27) and subsequent annealing at 750°C for 10 min exhibited the best ferroelectric properties in this work. With higher deposition temperature than R.T. and lower annealing temperature than 700°C, large hysteresis loops were not observed.
Keywords :
annealing; dielectric hysteresis; ferroelectric capacitors; ferroelectric materials; lanthanum compounds; lead compounds; pulsed laser deposition; reliability; PLD; PLZT; annealing temperature; deposition temperature; ferroelectric properties; orientation controlled ferroelectric capacitor; pulsed laser deposition; reliability; substrate temperature; temperature 293 K to 298 K; Annealing; Capacitors; Electrodes; Films; Hysteresis; Substrates; X-ray scattering; (Pb,La)(Zr,Ti)O3 thin film; crystallographic orientation; ferroelectric capacitor; pulsed laser deposition;
Conference_Titel :
Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the
Conference_Location :
Singapore
DOI :
10.1109/ISAF.2015.7172712
